Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED

• Main Authors: Mahat, Mohamad Raqif, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Anuar, Mohd Afiq, Allif, Kamarul, Azman, Adreen, Nakajima, Hideki, Shuhaimi, Ahmad, Abd Majid, Wan Haliza
• Format: Article
• Published: Elsevier 2020
• Subjects: Q Science (General); QC Physics
• Online Access: http://eprints.um.edu.my/1255/; https://doi.org/10.1016/j.mssp.2019.104757

Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. In this work, p-GaN samples were subjected to in-situ and ex-situ thermal annealing process at 650 °C in Nitrogen...