Body doping influence in vertical MOSFET design
The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxeddependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) me...
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| Main Authors: | , , , , |
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| Format: | Book Section |
| Published: |
Institute of Electrical and Electronics Engineers
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/13240/ http://dx.doi.org/10.1109/CITISIA.2009.5224233 |
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