Body doping influence in vertical MOSFET design

The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxeddependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) me...

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Bibliographic Details
Main Authors: Riyadi, Munawar A., Napiah, Zul Atfyi F. M., Suseno, Jatmiko E., Saad, Ismail, Ismail, Razali
Format: Book Section
Published: Institute of Electrical and Electronics Engineers 2009
Subjects:
Online Access:http://eprints.utm.my/id/eprint/13240/
http://dx.doi.org/10.1109/CITISIA.2009.5224233
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