Body doping influence in vertical MOSFET design

• Main Authors: Riyadi, Munawar A., Napiah, Zul Atfyi F. M., Suseno, Jatmiko E., Saad, Ismail, Ismail, Razali
• Format: Book Section
• Published: Institute of Electrical and Electronics Engineers 2009
• Subjects: QA75 Electronic computers. Computer science; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13240/; http://dx.doi.org/10.1109/CITISIA.2009.5224233

The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxeddependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) method is investigated. For this purpose, two-dimensional process simulation was made using TCAD tools for several Nsub, namely 1, 4, 7 ad 10.10 18 cm-3, respectively. The electrical characteristic and short channel effect i.e. DIBL and subthreshold swing, for different body doping were deliberated. The result also suggests the required change in the pillar design in maintaining the gate channel.