Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results...
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Main Authors: | Wei-Ching Huang,, Edward-Yi Chang,, Yuen-Yee Wong,, Kung-Liang Lin,, Yu-Lin Hsiao,, Chang, Fu Dee, Burhanuddin Yeop Majlis, |
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Format: | Article |
Language: | English |
Published: |
Universiti Kebangsaan Malaysia
2013
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Online Access: | http://journalarticle.ukm.my/5911/1/19%2520Wei-Ching%2520Huang.pdf http://journalarticle.ukm.my/5911/ http://www.ukm.my/jsm/ |
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