Feasibility study of GaN-based MEMS capacitive microphone using finite element method

• Main Authors: Rahmat Zaki Auliya,, M. F. Mohd. Razip Wee,, Subandi, Ayub, Muhammad Ramdzan Buyong,, Burhanuddin Yeop Majlis,
• Format: Article
• Language: English
• Published: Penerbit Universiti Kebangsaan Malaysia 2020
• Online Access: http://journalarticle.ukm.my/14847/1/12.pdf; http://journalarticle.ukm.my/14847/; http://www.ukm.my/jkukm/volume-321-2020/

Gallium nitride (GaN) is an excellent choice of semiconductor material due to its optoelectronic, mechanical and wide bandgap properties which are highly demanded by high-power and radio-frequency (RF) electronics but also widely employed for the fabrication of Light Emitting Diode (LED). In this p...