Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate

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Bibliographic Details
Main Authors: Chowdhury, Subhra, Biswas, Dhrubes
Other Authors: subhrachowdhury1987@gmail.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2016
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Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41289
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