Holdings: Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD

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Bibliographic Details
Main Authors:	Arsyad, F. S., Subagio, A., Sutanto, H., Arifin, P., Budiman, M., Barmawi, M., Husien, I., Zul Azhar, Zahid Jamal
Format:	Article
Language:	English
Published:	Institute of Electrical and Electronics Engineering (IEEE) 2009
Subjects:	Aluminium compounds Atomic force microscopy Semiconductor quantum dots Silicon Wide band gap semiconductors PA-MOCVD GaN Quantum Dot [(C2H5)4]Si Deposition
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/6698
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