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The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition

The properties of non-polar m-plane GaN layers grown on m-plane sapphire substrate using metal organic chemical vapor deposition at different disilane (Si2H6) and bis(cyclopentadienyl)magnesium (Cp2Mg) flow rates were investigated. The surface morphologies for Si- and Mg-doped of m-plane GaN exhibit...

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Bibliographic Details
Main Authors: Azman, Adreen, Kamarundzaman, Anas, Abu Bakar, Ahmad Shuhaimi, Abd Majid, Wan Haliza
Format: Article
Published: Elsevier 2021
Subjects:
QC Physics
TA Engineering (General). Civil engineering (General)
Online Access:http://eprints.um.edu.my/26720/
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http://eprints.um.edu.my/26720/

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