Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
Most works involving GaN technology on Si (111) substrate, especially for device applications suffer from high density dislocations and cracks in the sample which reduces the performance of the devices. The objective of this study is to introduce aluminium nitride/gallium nitride (AlN/GaN) strained-...
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| Format: | Thesis |
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2017
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| Online Access: | http://studentsrepo.um.edu.my/9555/1/Yusnizam_Yusuf.pdf http://studentsrepo.um.edu.my/9555/9/yusnizam.pdf http://studentsrepo.um.edu.my/9555/ |
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