Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dep...
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Main Authors: | Dmitri Osintsev,, Viktor Sverdlov,, Alexander Makarov,, Siegfried Selberherr, |
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Format: | Article |
Language: | English |
Published: |
Universiti Kebangsaan Malaysia
2013
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Online Access: | http://journalarticle.ukm.my/5905/1/13%2520Dmitri%2520Osintsev.pdf http://journalarticle.ukm.my/5905/ http://www.ukm.my/jsm/ |
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