Scaling behaviors of transient noise current in organic field-effect transistors
Top-contact and bottom-gate organic field-effect transistors (OFETs) based on poly(3-hexylthiophene), P3HT polymer has been fabricated with thermal treatment condition. Transient noise currents of the OFETs are measured at various source–drain voltages ranging from 0 V to −60 V with respect to a fix...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Elsevier
2012
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/12970/ http://www.sciencedirect.com/science/article/pii/S1566119912001395 http://dx.doi.org/10.1016/j.orgel.2012.04.003 |
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