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Channel conductance of ABA stacking trilayer graphene nanoribbon field-effect transistor

In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study l...

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Bibliographic Details
Main Authors: Sadeghi, Hatef, Ahmadi, Mohammad Taghi, Mousavi, S. M., Ismail, Razali, Ghadiry, Mahdiar H.
Format: Article
Language:English
Published: 2012
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/46674/1/SadeghiHatef_2012_Channel%20Conductance%20of%20ABA%20Stacking%20Trilayer%20Graphene%20Nanoribbon%20Field-Effect%20Transistor.pdf
http://eprints.utm.my/id/eprint/46674/
https://dx.doi.org/10.1142/S0217984912500479
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http://eprints.utm.my/id/eprint/46674/1/SadeghiHatef_2012_Channel%20Conductance%20of%20ABA%20Stacking%20Trilayer%20Graphene%20Nanoribbon%20Field-Effect%20Transistor.pdf
http://eprints.utm.my/id/eprint/46674/
https://dx.doi.org/10.1142/S0217984912500479

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