Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures

• Main Authors: Sanchez, A. M., Beanland, R., Hasbullah, Nurul Fadzlin, Hopkinson, M., David, J. P. R.
• Format: Article
• Language: English
• Published: American Institute of Physics 2009
• Subjects: TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• Online Access: http://irep.iium.edu.my/17647/1/Correlation_between_defect_density_and_current_leakage_-_Sanchez_JAP_2009.pdf; http://irep.iium.edu.my/17647/; http://dx.doi.org/10.1063/1.3168492

We present a study of InAs/GaAs quantum dot-in-well �DWELL� material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spa...