Electrical characterization of N-MOS and P-MOS Junctionless Gate-All-Around (GAA) MOSFET for an inverter application
This paper presents a numerical simulation to examine the electrical performance of a Junctionless Gate-All-Around (JGAA) Field Effect Transistor (FET) as an inverter. The advantages of the device offer smaller threshold voltage, lower leakage current, better electrostatic control, better device per...
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Main Authors: | Ho, Kok Pow, N., Mathan, Mohamed Ali, Mohamed Sultan, Mohd. Napi, Muhammad Luqman, Hosseingholipouras, Ali, Abd. Hamid, Fatimah Khairiah |
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Format: | Article |
Language: | English |
Published: |
Penerbit UTM Press
2021
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/97825/1/FatimahKhairiah2021_ElectricalCharacterizationofNMOSandPMOS.pdf http://eprints.utm.my/id/eprint/97825/ https://elektrika.utm.my/index.php/ELEKTRIKA_Journal/article/view/276 |
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