Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell
Due to high gate electrostatic control and introduction of punch and plug process technology, the gate-all-around (GAA) transistor is very promising in, and apparently has been utilized for, flash memory applications. However, GAA Floating Gate (GAA-FG) memory cell still requires high programming vo...
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Main Author: | Hamzah, Muhammad Afiq Nurudin |
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Format: | Thesis |
Language: | English |
Published: |
2018
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/79404/1/MuhammadAfiqNurudinPFKE2018.pdf http://eprints.utm.my/id/eprint/79404/ |
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