Effect of low-k oxide thickness variation on gate-all-around floating gate with optimized SiO2/La2O3 tunnel barrier

• Main Authors: A. Hamid, Farah, Alias, N. Ezaila, Johari, Zaharah, Hamzah, Afiq, Tan, M. L. Peng, Ismail, Razali
• Format: Article
• Published: Institute of Physics Publishing 2019
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/88655/; http://dx.doi.org/10.1088/2053-1591/ab2869

This paper reports the use of a novel lanthanum oxide (La2O3) tunnel barrier layer with low-k materials, silicon dioxide (SiO2) to improve Gate-All-Around Floating Gate (GAA-FG) memory performance performed using 3-Dimensional (3D) simulator of Silvaco ATLAS. We examine the ability of Variable Oxide...