STUDY THE EFFECT OF GATE OXIDE THICKNESS AND LDD DOPING PROFILE ON THE PERFORMANCE OF LDMOS BY USING SIMULATOR

LDMOS is a silicon deviceand has been provento be a populardevice in high power RF application. It has excellent efficiency, linearity and peak power capability. The LDMOS roadmap is always to improve intrinsic die performance in key areas such as efficiency, gain and continuing focus on cost - e...

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Bibliographic Details
Main Author: RAJA DAUD, RAJA SAHARUDDIN
Format: Final Year Project
Language:English
Published: Universiti Teknologi PETRONAS 2007
Subjects:
Online Access:http://utpedia.utp.edu.my/9629/1/2007%20-%20Study%20the%20Effect%20of%20Gate%20Oxide%20Thickness%20and%20LDD%20Doping%20Profile%20on%20the%20Performance%20of%20LDMO.pdf
http://utpedia.utp.edu.my/9629/
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