Optimization of process parameter variability in 45 nm PMOS device using Taguchi method

This study reports on an investigation of the effect and optimization of process parameter variability on poly sheet resistance (Rs) and leakage current (ILeak) in 45 nm PMOS device. The experimental studies were conducted under varying four process parameters, namely Halo implantation, Source/Drain...

Full description

Saved in:
Bibliographic Details
Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
Other Authors: 36239165300
Format: Article
Published: 2023
Subjects:
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items