Effect of process parameter variations on threshold voltage in 45nm NMOS device

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
• 其他作者: 36239165300
• 格式: Conference paper
• 出版: 2023
• 主題: 45nm NMOS; Process parameter variation; Silvaco; Taguchi method; Growth temperature; Innovation; Optimization; Silicides; Taguchi methods; Threshold voltage; Anneal temperatures; Electrical characterization; Halo implantation; NMOS devices; Optimal process; Optimizers; Oxide growth; Process parameter variations; Process parameters; Response characteristic; Taguchi; Virtual fabrication; Engineering research

Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal te...