Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
2017
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| Online Access: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5244 |
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