Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Elgomati H.A., Majlis B.Y., Apte P.R.
• Other Authors: 36239165300
• Format: Article
• Published: 2023
• Subjects: HALO structure; Optimization; P-type mosfets device; Taguchi method; Growth temperature; MOSFET devices; Silicides; Simulators; Taguchi methods; Anneal temperatures; Device simulators; Halo implants; Metal-oxide-semiconductor field-effect transistor; MOSFETs; P-type; Process parameters; Process simulators; Structural optimization

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...