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Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of...

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書誌詳細
主要な著者:	Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Elgomati H.A., Majlis B.Y.
その他の著者:	36239165300
フォーマット:	Conference Paper
出版事項:	2023
主題:	Experiments Metallic compounds MOS devices Semiconductor devices Signal to noise ratio Taguchi methods Threshold voltage Vanadium Control factors Device simulators Halo implants Implant energy Metal oxide semiconductor device MOS-FET N-channel NMOS devices Noise factor Orthogonal array Performance characteristics Process parameter variations Process parameters Process simulators Response characteristic Signal to noise Simulators
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