Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Elgomati H.A., Majlis B.Y.
• Other Authors: 36239165300
• Format: Conference Paper
• Published: 2023
• Subjects: Experiments; Metallic compounds; MOS devices; Semiconductor devices; Signal to noise ratio; Taguchi methods; Threshold voltage; Vanadium; Control factors; Device simulators; Halo implants; Implant energy; Metal oxide semiconductor device; MOS-FET; N-channel; NMOS devices; Noise factor; Orthogonal array; Performance characteristics; Process parameter variations; Process parameters; Process simulators; Response characteristic; Signal to noise; Simulators

In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of...