Simulation on Effects of Different Types of Channel/Drain Engineering Structure on MOS Device Performance

• Main Author: Norazlina Mohd Amin
• Other Authors: Noraini Othman (Advisor)
• Format: Learning Object
• Language: English
• Published: Universiti Malaysia Perlis 2008
• Subjects: Metal oxide semiconductors; MOS transistor; Lightly Doped Drain (LDD); Moderately Doped Drain (MDD); Halo-Implantation structure; Metal oxide semiconductors > Mathematical models
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/1338

This final year project is aimed to analyze the effects of three different types of channel/drain engineering structure on MOS transistor performance. As a project basis, a 0.35μm process recipe from UC Berkeley is used as reference. To proceed it, the other parameters need to be retained and only t...