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Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation

The repercussions of a 16 nm double-gate FinFET (DG-FinFET) design against two different optimization methods are investigated and examined. The drive current (ION) and leakage current (IOFF) ramifications towards the adjustment of six process parameter that incorporates polysilicon doping dose, pol...

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書目詳細資料
Main Authors:	Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I.
其他作者:	57203514087
格式:	Article
出版:	Asian Research Publishing Network 2023
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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