Optimization of 16 nm DG-FinFET using L25 orthogonal array of Taguchi statistical method
The impact of the optimization using Taguchi statistical method towards the electrical properties of a 16 nm double-gate FinFET (DG-FinFET) is investigated and analyzed. The inclusion of drive current (ION), leakage current (IOFF), and threshold voltage (VTH) as part of electrical properties present...
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| Format: | Article |
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Institute of Advanced Engineering and Science
2023
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