Statistical Optimization Influence on High Permittivity Gate Spacer in 16nm DG-FinFET Device
In this paper, the effect of high permittivity gate spacer on short channel effects (SCEs) for the 16 nm double-gate finFET is investigated, with the output responses optimized using L9 orthogonal array (OA) Taguchi method. The determination is done through Signal-to-noise ratio to the effectiveness...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
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UiTM Press
2023
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