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Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation

The repercussions of a 16 nm double-gate FinFET (DG-FinFET) design against two different optimization methods are investigated and examined. The drive current (ION) and leakage current (IOFF) ramifications towards the adjustment of six process parameter that incorporates polysilicon doping dose, pol...

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書誌詳細
主要な著者:	Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I.
その他の著者:	57203514087
フォーマット:	論文
出版事項:	Asian Research Publishing Network 2023
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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