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Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET

Band structure; Capacitance; Drain current; Electric field effects; Metals; MOS devices; Oxide semiconductors; Transconductance; Comparative analysis; Comprehensive analysis; Double gate MOSFET; Dynamic power dissipation; Intrinsic gate capacitance; Intrinsic gate delay; Strained channels; Transcond...

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書誌詳細
主要な著者:	Kaharudin K.E., Salehuddin F., Zain A.S.M., Roslan A.F., Ahmad I.
その他の著者:	56472706900
フォーマット:	Conference Paper
出版事項:	Institute of Physics Publishing 2023
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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