Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET
Band structure; Capacitance; Drain current; Electric field effects; Metals; MOS devices; Oxide semiconductors; Transconductance; Comparative analysis; Comprehensive analysis; Double gate MOSFET; Dynamic power dissipation; Intrinsic gate capacitance; Intrinsic gate delay; Strained channels; Transcond...
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2023
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my.uniten.dspace-254232023-05-29T16:09:14Z Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET Kaharudin K.E. Salehuddin F. Zain A.S.M. Roslan A.F. Ahmad I. 56472706900 36239165300 55925762500 57203514087 12792216600 Band structure; Capacitance; Drain current; Electric field effects; Metals; MOS devices; Oxide semiconductors; Transconductance; Comparative analysis; Comprehensive analysis; Double gate MOSFET; Dynamic power dissipation; Intrinsic gate capacitance; Intrinsic gate delay; Strained channels; Transconductance generation factors; Power MOSFET Application of strained channel in Metal-oxide-semiconductor Field Effect Transistors (MOSFET) technology influences the electrical properties due to the significant changes in the energy band structure of silicon lattices. Thus, in this paper, a comprehensive analysis is conducted to investigate the impact of strained channel towards several electrical properties of junctionless double-gate MOSFET. The comparative analysis is carried out by simulating two different sets of device structure which are JLDGM device (without strain) and junctionless double-gate strained MOSFET (JLDGSM) device. The results show that the strained channel has improved the on-state current (ION), on-off ratio, transconductance (gm) and transconductance generation factor (TGF) by approximately 58 %, 98%, 98%, and 44% respectively. The significant improvement is mainly attributed to the presence of biaxial strain boosting the electron mobility in the channel. The intrinsic gate delay (?int) has significantly reduced by approximately 52% as the strained channel is applied. Since the variation of intrinsic gate capacitances (Cint) is very minimal (4%) as the strained channel is applied, the gate delay is dominantly governed by the drain current. However, the application of strain channel has increased the dynamic power dissipation (Pdyn) for approximately 19% mainly due to slightly increased intrinsic gate capacitances. � 2020 IOP Publishing Ltd. All rights reserved. Final 2023-05-29T08:09:14Z 2023-05-29T08:09:14Z 2020 Conference Paper 10.1088/1742-6596/1502/1/012045 2-s2.0-85087105182 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85087105182&doi=10.1088%2f1742-6596%2f1502%2f1%2f012045&partnerID=40&md5=712e7274d5697c6c3b7829d2d9e772dc https://irepository.uniten.edu.my/handle/123456789/25423 1502 1 12045 All Open Access, Gold Institute of Physics Publishing Scopus |
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| description |
Band structure; Capacitance; Drain current; Electric field effects; Metals; MOS devices; Oxide semiconductors; Transconductance; Comparative analysis; Comprehensive analysis; Double gate MOSFET; Dynamic power dissipation; Intrinsic gate capacitance; Intrinsic gate delay; Strained channels; Transconductance generation factors; Power MOSFET |
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56472706900 |
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56472706900 Kaharudin K.E. Salehuddin F. Zain A.S.M. Roslan A.F. Ahmad I. |
| format |
Conference Paper |
| author |
Kaharudin K.E. Salehuddin F. Zain A.S.M. Roslan A.F. Ahmad I. |
| spellingShingle |
Kaharudin K.E. Salehuddin F. Zain A.S.M. Roslan A.F. Ahmad I. Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET |
| author_sort |
Kaharudin K.E. |
| title |
Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET |
| title_short |
Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET |
| title_full |
Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET |
| title_fullStr |
Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET |
| title_full_unstemmed |
Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET |
| title_sort |
impact of strained channel on electrical properties of junctionless double gate mosfet |
| publisher |
Institute of Physics Publishing |
| publishDate |
2023 |
| _version_ |
1806425860846125056 |
| score |
13.18916 |