Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET
Band structure; Capacitance; Drain current; Electric field effects; Metals; MOS devices; Oxide semiconductors; Transconductance; Comparative analysis; Comprehensive analysis; Double gate MOSFET; Dynamic power dissipation; Intrinsic gate capacitance; Intrinsic gate delay; Strained channels; Transcond...
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| Main Authors: | , , , , |
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| Format: | Conference Paper |
| Published: |
Institute of Physics Publishing
2023
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| Summary: | Band structure; Capacitance; Drain current; Electric field effects; Metals; MOS devices; Oxide semiconductors; Transconductance; Comparative analysis; Comprehensive analysis; Double gate MOSFET; Dynamic power dissipation; Intrinsic gate capacitance; Intrinsic gate delay; Strained channels; Transconductance generation factors; Power MOSFET |
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