Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method
Analysis of variance (ANOVA); Field effect transistors; Graphene transistors; Ion implantation; Ions; Taguchi methods; Bilayer Graphene; Dominant process; Halo implants; Implant energy; L9 orthogonal arrays; Parameter setting; Process parameters; Statistical modeling; Signal to noise ratio
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| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Published: |
Institute of Physics Publishing
2023
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