Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method
Analysis of variance (ANOVA); Field effect transistors; Graphene transistors; Ion implantation; Ions; Taguchi methods; Bilayer Graphene; Dominant process; Halo implants; Implant energy; L9 orthogonal arrays; Parameter setting; Process parameters; Statistical modeling; Signal to noise ratio
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2023
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my.uniten.dspace-235282023-05-29T14:50:06Z Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method Roslan A.F. Kaharudin K.E. Salehuddin F. Zain A.S.M. Ahmad I. Faizah Z.A.N. Hazura H. Hanim A.R. Idris S.K. Zaiton A.M. Mohamad N.R. Hamid A.M.A. 57203514087 56472706900 36239165300 55925762500 12792216600 56395444600 35108985200 57193616206 57202632295 36069361000 55383652800 36570222300 Analysis of variance (ANOVA); Field effect transistors; Graphene transistors; Ion implantation; Ions; Taguchi methods; Bilayer Graphene; Dominant process; Halo implants; Implant energy; L9 orthogonal arrays; Parameter setting; Process parameters; Statistical modeling; Signal to noise ratio The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (L g ) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L 9 orthogonal array (OA) of Taguchi method to achieve the highest possible I ON /I OFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon I ON /I OFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the I ON /I OFF ratio. The final results indicate that the 1.99 � 10 13 atom/cm 3 of halo implant dose. 174 keV of halo implant energy, 1.63 � 10 14 atom/cm 3 of S/D implant dose, 17 keV of S/D implant energy, 24� of halo implant tilt angle and 9� of S/D implant tilt angle are the best parameter setting in obtaining the highest I on /I off ratio of the device which is measured at 4.811 � 10 5 . � Published under licence by IOP Publishing Ltd. Final 2023-05-29T06:50:06Z 2023-05-29T06:50:06Z 2018 Conference Paper 10.1088/1742-6596/1123/1/012046 2-s2.0-85058241317 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85058241317&doi=10.1088%2f1742-6596%2f1123%2f1%2f012046&partnerID=40&md5=260439dcd4019ccff391a6be8fae1101 https://irepository.uniten.edu.my/handle/123456789/23528 1123 1 12046 All Open Access, Gold Institute of Physics Publishing Scopus |
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Analysis of variance (ANOVA); Field effect transistors; Graphene transistors; Ion implantation; Ions; Taguchi methods; Bilayer Graphene; Dominant process; Halo implants; Implant energy; L9 orthogonal arrays; Parameter setting; Process parameters; Statistical modeling; Signal to noise ratio |
| author2 |
57203514087 |
| author_facet |
57203514087 Roslan A.F. Kaharudin K.E. Salehuddin F. Zain A.S.M. Ahmad I. Faizah Z.A.N. Hazura H. Hanim A.R. Idris S.K. Zaiton A.M. Mohamad N.R. Hamid A.M.A. |
| format |
Conference Paper |
| author |
Roslan A.F. Kaharudin K.E. Salehuddin F. Zain A.S.M. Ahmad I. Faizah Z.A.N. Hazura H. Hanim A.R. Idris S.K. Zaiton A.M. Mohamad N.R. Hamid A.M.A. |
| spellingShingle |
Roslan A.F. Kaharudin K.E. Salehuddin F. Zain A.S.M. Ahmad I. Faizah Z.A.N. Hazura H. Hanim A.R. Idris S.K. Zaiton A.M. Mohamad N.R. Hamid A.M.A. Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method |
| author_sort |
Roslan A.F. |
| title |
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method |
| title_short |
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method |
| title_full |
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method |
| title_fullStr |
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method |
| title_full_unstemmed |
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method |
| title_sort |
optimization of 10nm bi-gfet device for higher ion/ioff ratio using taguchi method |
| publisher |
Institute of Physics Publishing |
| publishDate |
2023 |
| _version_ |
1806423496946876416 |
| score |
13.222552 |