Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
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Main Authors: | K, Karami, S., Taking, A., Ofiare, A., Dhongde, A., Al-Khalidi, E., Wasige |
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Other Authors: | k.karami.1@research.gla.ac.uk |
Format: | Article |
Language: | English |
Published: |
Universiti Malaysia Perlis (UniMAP)
2022
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Subjects: | |
Online Access: | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036 |
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