Luminescence and crystalline properties of InGaN-based LED on Si substrate with AlN/GaN superlattice structure

• Main Authors: Alias, Ezzah Azimah, Taib, Muhamad Ikram Md, Abu Bakar, Ahmad Shuhaimi, Egawa, Takashi, Kent, Anthony J., Kamil, Wan Maryam Wan Ahmad, Zainal, Norzaini
• Format: Article
• Published: Penerbit Universiti Sains Malaysia 2021
• Subjects: Q Science (General); T Technology (General)
• Online Access: http://eprints.um.edu.my/35072/

A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on silicon (Si) substrate was successfully demonstrated by introducing aluminium nitride/gallium nitride (AlN/GaN) superlattice structure (SLS) in the growth of the LED. The luminescence and the crystalline properties...