Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor

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Bibliographic Details
Main Authors: K, Karami, S., Taking, A., Ofiare, A., Dhongde, A., Al-Khalidi, E., Wasige
Other Authors: k.karami.1@research.gla.ac.uk
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
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Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036
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