Cover Image

Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor

Link to publisher's homepage at http://ijneam.unimap.edu.my

Saved in:
Bibliographic Details
Main Authors: K, Karami, S., Taking, A., Ofiare, A., Dhongde, A., Al-Khalidi, E., Wasige
Other Authors: k.karami.1@research.gla.ac.uk
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
Subjects:
AlN/GaN
Metal oxide semiconductor high electron mobility transistors (MOSHEMTs)
Heavily doped GaN cap layer
Selective etching the cap layer
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-75036
record_format dspace
spelling my.unimap-750362022-04-22T01:25:32Z Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor K, Karami S., Taking A., Ofiare A., Dhongde A., Al-Khalidi E., Wasige k.karami.1@research.gla.ac.uk AlN/GaN Metal oxide semiconductor high electron mobility transistors (MOSHEMTs) Heavily doped GaN cap layer Selective etching the cap layer Link to publisher's homepage at http://ijneam.unimap.edu.my In this work, we report on the processing and device characteristics of n++ GaN/AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs). The AlN/GaN structure is capped with a highly doped n++ GaN layer which provides more free electrons in the cap layer thus helps in reducing the Ohmic contact resistance. However, this layer in the gate region needs to be removed prior to gate metal deposition to avoid a conducting path between gate metal and the cap layer. A conducting path between the gate metal and GaN cap layer creates gate to source and gate to drain short circuit. A selective etching recipe was developed between n++ GaN and AlN layers. The gas used is a mixture of SF6 and O2. A 5 nm SiO2 is used as a gate dielectric and surface passivation to the device. The fabricated device shows a maximum drain current density of 800 mA/mm and a maximum peak transconductance of 135 mS/mm. The breakdown voltage of the device is 73 V. The measured contact resistance for the non-annealed and annealed Ohmic contact is between 5 to 10 Ω.mm and 0.4 to 0.6 Ω.mm, respectively. This indicates that the usage of heavily doped 5 nm n++ GaN cap layer helps in reducing the contact resistance. The results show the potential of the AlN/GaN MOSHEMT structure with a n++ GaN cap layer for future high frequency power application. 2022-04-22T01:25:32Z 2022-04-22T01:25:32Z 2021-12 Article International Journal of Nanoelectronics and Materials, vol.14 (Special Issue), 2021, pages 45-51 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic AlN/GaN
Metal oxide semiconductor high electron mobility transistors (MOSHEMTs)
Heavily doped GaN cap layer
Selective etching the cap layer
spellingShingle AlN/GaN
Metal oxide semiconductor high electron mobility transistors (MOSHEMTs)
Heavily doped GaN cap layer
Selective etching the cap layer
K, Karami
S., Taking
A., Ofiare
A., Dhongde
A., Al-Khalidi
E., Wasige
Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 k.karami.1@research.gla.ac.uk
author_facet k.karami.1@research.gla.ac.uk
K, Karami
S., Taking
A., Ofiare
A., Dhongde
A., Al-Khalidi
E., Wasige
format Article
author K, Karami
S., Taking
A., Ofiare
A., Dhongde
A., Al-Khalidi
E., Wasige
author_sort K, Karami
title Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_short Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_full Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_fullStr Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_full_unstemmed Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
title_sort heavily doped n++ gan cap layer aln/gan metal oxide semiconductor high electron mobility transistor
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2022
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75036
_version_ 1738511703425941504
score 13.160551

Similar Items