持有资料: Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs

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Main Authors:	A., Ofiare, S., Taking, K., Karami, A., Dhongde, A., Al-Khalidi, E., Wasige
格式:	Article
语言:	English
出版:	Universiti Malaysia Perlis (UniMAP) 2022
主题:	AlGaN/GaN High electron mobility transistors (HEMTs) Plasma induced damage Post-gate annealing
在线阅读:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75096
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