Holdings: The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs

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Bibliographic Details
Main Authors:	A., Dhongde, S., Taking, M., Elksne, S., Samanta, A., Ofiare, K., Karami, A., Al-Khalidi, E., Wasige
Other Authors:	a.dhongde.1@research.gla.ac.uk
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis (UniMAP) 2022
Subjects:	AlGaN/GaN Etching high electron mobility transistors (HEMTs) Ohmic contact
Online Access:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75226
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