The impact of channel fin width on electrical characteristics of Si-FinFET
This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temp...
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Main Authors: | Atalla, Y., Hashim, Y., Abdul Nasir, Abd Ghafar |
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Format: | Article |
Language: | English |
Published: |
Institute of Advanced Engineering and Science
2022
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Subjects: | |
Online Access: | http://umpir.ump.edu.my/id/eprint/33072/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics%20of%20Si-FinFET.pdf http://umpir.ump.edu.my/id/eprint/33072/ https://doi.org/10.11591/ijece.v12i1.pp201-207 https://doi.org/10.11591/ijece.v12i1.pp201-207 |
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