The impact of channel fin width on electrical characteristics of Si-FinFET

This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temp...

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Bibliographic Details
Main Authors: Atalla, Y., Hashim, Y., Abdul Nasir, Abd Ghafar
Format: Article
Language:English
Published: Institute of Advanced Engineering and Science 2022
Subjects:
Online Access:http://umpir.ump.edu.my/id/eprint/33072/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics%20of%20Si-FinFET.pdf
http://umpir.ump.edu.my/id/eprint/33072/
https://doi.org/10.11591/ijece.v12i1.pp201-207
https://doi.org/10.11591/ijece.v12i1.pp201-207
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