Device simulation of the electrical characteristics in 14nm gaussian channel junctionless finfet

• Main Author: Ramakrishnan, Mathangi
• Format: Thesis
• Language: English
• Published: 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/102170/1/MathangiRamakrishnanMSKE2022.pdf.pdf; http://eprints.utm.my/id/eprint/102170/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149119

In conventional FinFET, it becomes difficult to define the doping concentration of material over a distance shorter than 10nm and produce high-quality junctions for sub 20nm regime which leads to short channel effects. Hence, Junctionless FinFET which offers architecture, free from any p-n junction...