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Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

Purpose: To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Design/methodology/approach: Varying material and physic...

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Bibliographic Details
Main Authors:	Othman, Nurul Aida Farhana, Rahman, Sharidya, Wan Muhamad Hatta, Sharifah Fatmadiana, Soin, Norhayati, Benbakhti, Brahim, Duffy, Steven
Format:	Article
Published:	Emerald 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.um.edu.my/23780/ https://doi.org/10.1108/MI-09-2018-0057
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