Open-gated ph sensor fabricated on an undoped-algan/gan hemt structure

• Main Authors: Zainal Abidin, Mastura Shafinaz, Hashim, Abdul Manaf, Sharifabad, Maneea Eizadi, Abd. Rahman, Shaharin Fadzli, Sadoh, Taizoh
• Format: Article
• Published: Molecular Diversity Preservation International 2011
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/29736/; http://dx.doi.org/10.3390/s110303067

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This se...