Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions
Purpose: To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Design/methodology/approach: Varying material and physic...
Saved in:
Main Authors: | , , , , , |
---|---|
Format: | Article |
Published: |
Emerald
2019
|
Subjects: | |
Online Access: | http://eprints.um.edu.my/23780/ https://doi.org/10.1108/MI-09-2018-0057 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!