Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

• Main Authors: Othman, Nurul Aida Farhana, Rahman, Sharidya, Wan Muhamad Hatta, Sharifah Fatmadiana, Soin, Norhayati, Benbakhti, Brahim, Duffy, Steven
• Format: Article
• Published: Emerald 2019
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/23780/; https://doi.org/10.1108/MI-09-2018-0057

Purpose: To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Design/methodology/approach: Varying material and physical considerations, specifically investigating the effects of graded barriers, spacer interlayer, material selection for the channel, as well as study of the effects in the physical dimensions of the HEMT, have been extensively carried out. Findings: Critical figure-of-merits, specifically the DC characteristics, 2DEG concentrations and mobility of the heterostructure device, have been evaluated. Significant observations include enhancement of maximum current density by 63 per cent, whereas the electron concentration was found to propagate by 1,020 cm−3 in the channel. Practical implications: This work aims to provide tactical optimization to traditional heterostructure field effect transistors, rendering its application as power amplifiers, Monolithic Microwave Integrated Circuit (MMICs) and Radar, which requires low noise performance and very high radio frequency design operations. Originality/value: Analysis in covering the breadth and complexity of heterostructure devices has been carefully executed through extensive TCAD modeling, and the end structure obtained has been optimized to provide best performance. © 2019, Emerald Publishing Limited.