DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

• Main Authors: Murugapandiyan, P., Ravimaran, S., William, J.
• Other Authors: [e-mail]
• Format: Article
• Language: English
• Published: Universiti Malaysia Perlis (UniMAP) 2017
• Subjects: HEMT; Back-barrier; Recessed gate; Cut-off frequency; Regrown ohmic contact; Short channel effects
• Online Access: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953

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