Investigation of a 3 nm Strained Fin Field-Effect Transistor (FinFET)
Fin Field-Effect Transistor (FinFET) device is qualified for its low-power operation capability at which the performance can be improved with further scaling. However, critical scaling towards 10nm of FinFET leads to a series of issues such as drain-induced barrier lowering (DIBL), threshold voltage...
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| Format: | Final Year Project / Dissertation / Thesis |
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2023
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| Online Access: | http://eprints.utar.edu.my/5960/1/Tan_Pei_Xin_21AGM06713.pdf http://eprints.utar.edu.my/5960/ |
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