reliability analysis of gate-all-around floating gate (GAA-FG) with variable oxide thickness for flash memory cell
In this work, a concept of tunnel barrier engineering using Variable Oxide Thickness (VARIOT) of low-k/high-k stack is implemented in Gate-All-Around Floating Gate (GAA-FG) memory cell to reduce P/E operational voltage, improve the efficiency of data retention after 10 years and endurance after 10 4...
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Main Authors: | Hamid, F., Alias, N. E., Hamzah, A., Johari, Z., Tan, M. L. P., Ismail, R., Soin, N. |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/93378/1/FarahHamid2020_ReliabilityAnalysisOfGateAllAround.pdf http://eprints.utm.my/id/eprint/93378/ http://dx.doi.org/10.1109/EDTM47692.2020.9117949 |
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