Empirical modeling of a graphene field-effect transistor sensor
This theoretical nanoscience work explore the empirical method of extracting experimental radiation sensor data from published work and project the performance limit of the sensor in term of back gate voltage, resistance and radiation flux. We demonstrate an empirical regression modeling of an X-ray...
Saved in:
Main Authors: | Chin, Huei Chaeng, Haur, Ku Fwu, Tan, Michael Loong Peng |
---|---|
Format: | Article |
Published: |
American Scientific Publishers
2015
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/54991/ http://dx.doi.org/10.1166/jctn.2015.3709 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors
by: Chin, Huei Chaeng, et al.
Published: (2016) -
Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
by: Chin, Huei Chaeng
Published: (2015) -
Modeling the impact of phonon scattering with strain effects on the electrical properties of MoS2 field-effect transistors
by: Chin, Huei Chaeng, et al.
Published: (2023) -
Enhanced device and circuit-level performance benchmarking of graphene nanoribbon field-effect transistor against a nano-MOSFET with interconnects
by: Chin, Huei Chaeng, et al.
Published: (2014) -
Quasi-one-dimensional performance and benchmarking of CMOS-based multichannel carbon nanotube versus nanowire field-effect transistor models
by: Chin, Huei Chaeng, et al.
Published: (2015)